adva nced power electronics corp. 1/5 AP2330GN-HF-3 n-channel enhancement-mode power mosfet dss ds(on) d description absolute maximum ratings symbol units v ds v gs i d a i dm d at t a =25c t stg j symbol value unit parameter rating gate-source voltage continuous drain current 3 pulsed drain current 1 thermal data parameter storage temperature range a dvanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. the AP2330GN-HF-3 is in the popular sot-23 small surface-mount package bv 90v simple drive requirement low gate charge drain-source voltage 90 v 20 v rthj- a maximum thermal resistance, junction- ambient which is widely used in commercial and industrial applications where a small board footprint is required. this device is well suited for use in medium current applications such as voltage conversion or switch applications. o rdering information d a i continuous drain curren t 3 www.a-powerusa.com rohs-compliant , h alogen-free i 1.7 a at t =2 5 c 1.7 a at t = 7 0 c 1.3 a 6 a p total power dissipation 1.38 w -55 to 150 c t operating junction temperature range -55 to 1 50 c 9 0 c /w ?20 1 1 advanced power electronics corp. usa 200912082-3 surface mount device r 240 m w d g s sot-23 AP2330GN-HF-3 tr : in rohs-complian t halogen-free sot-23 , shipped on tape and reel, 30 00pcs/ reel d s g
adva nced power electronics corp. 2/5 AP2330GN-HF-3 ?2011 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =25c (unless otherwise specified) source-drain diode notes: this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve 1. pulse width limited by maximum junction temperature. reliability, function or design. copper pad of fr4 board, t <10sec; 270c/w when mounted on minimum copper pad. 2 2. pulse test - pulse width < 300s , duty cycle < 2% 3. surface mounted on 1in symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 90 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =1.5a - - 240 mw v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2.8 - 4 v g fs forward transconductance v ds =10v, i d =1.5a - 2.2 - s i dss drain-source leakage current v ds =72v, v gs =0v - - 10 ua i gss gate-source leakage v gs = 20v, v ds =0v - - 100 na q g total gate charge 2 i d =1.5a - 8 13 nc q gs gate-source charge v ds =80v - 2.4 - nc q gd gate-drain ("miller") charge v gs =10v - 3.3 - nc t d(on) turn-on delay time 2 v ds =50v - 7 - ns t r rise time i d =1a - 5 - ns t d(off) turn-off delay time r g =3.3w ,v gs =10v - 12.5 - ns t f fall time r d =50w -4- ns c iss input capacitance v gs =0v - 350 560 pf c oss output capacitance v ds =25v - 40 - pf c rss reverse transfer capacitance f=1.0mhz - 30 - pf symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =1.5a, v gs =0v, - 38 - ns q rr reverse recovery charge di/dt=100a/s - 65 - nc
adva nced power electronics corp. 3/5 AP2330GN-HF-3 ?2011 advanced power electronics corp. usa www.a-powerusa.com fig 1. typical output characteristics fig 2. typical output characteristics vs. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage vs. reverse diode junction temperature typical electrical characteristics gate voltage fig 3. normalized bv dss vs. fig 4. normalized on-resistance 0 2 4 6 8 10 01234 v ds , drain-to-source voltage (v) i d , dr a i n c u r r e nt (a ) t a =25 o c 10v 8.0v 7.0v 6.0v v g = 5.0v 0 1 2 3 4 5 6 01 234 v ds , drain-to-source voltage (v) i d , dr a i n c u r r e nt (a ) t a = 150 o c 10v 8.0v 7.0v v g = 6.0v 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) n o rmalize d r ds(on) i d = 1.5 a v g =10v 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a ) t j =25 o c t j =150 o c 0.4 0.6 0.8 1.0 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) n o rmalize d v gs(t h) (v ) 0.8 0.9 1 1.1 1.2 1.3 -50 0 50 100 150 t j , junction temperature ( o c) n o rmalize d bv dss (v )
adva nced power electronics corp. 4/5 AP2330GN-HF-3 ?2011 advanced power electronics corp. usa www.a-powerusa.com fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform typical electrical characteristics (cont.) t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0 2 4 6 8 10 12 024 68 1 0 q g , total gate charge (nc) v gs , g a te to s o u rc e voltage ( v ) i d = 1.5a v ds =80v 0 100 200 300 400 500 600 1 5 9 1 31 72 1 2 52 9 v ds , drain-to-source voltage (v) c ( p f) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) nor m aliz ed t h er mal r e s pons e (r th ja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 27 0c/w t t 0.001 0.01 0.1 1 10 0.01 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a ) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc operation in this area limited by r ds(on)
adva nced power electronics corp. 5/5 AP2330GN-HF-3 ?2011 advanced power electronics corp. usa www.a-powerusa.com package dimensions: sot-23 marking information: product: m2 = AP2330GN-HF-3 date/lot code for details of how to convert this to standard yyww date code format, please contact us directly. 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. millimeters min nom max a 0.88 -- 1.30 a1 0.00 -- 0.10 a2 0.08 -- 0.25 d1 0.30 0.40 0.50 e 1.70 2.00 2.30 d 2.70 2.90 3.10 e 2.20 2.60 3.00 e1 1.20 1.50 1.80 m 0 -- 10 l 0.30 -- 0.60 symbols m2xx d e1 e e d1 a a2 a1 m m l
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